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savantic semiconductor product specification silicon pnp power transistors 2SA1803 description with to-3pfm package complement to type 2sc4688 applications power amplifier applications recommend for 40w high fidelity audio frequency amplifier output stage pinning (see fig.2 ) pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -6 a i cm collector current-peak -12 a i b base current -0.6 a p c collector power dissipation t c =25 55 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1803 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -80 v v cesat collector-emitter saturation voltage i c =-5a;i b =-0.5 a -2.0 v v be base-emitter voltage i c =-3a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -5 a i ebo emitter cut-off current v eb =-5v; i c =0 -5 a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-3a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-5v 30 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 290 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1803 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1803

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